Leading Saudi Fabless Power Semiconductor Design Company
About Rimal Semiconductor
Established in the Kingdom of Saudi Arabia, Rimal Semiconductor is the Kingdom’s first fabless power semiconductor design company specializing in advanced power devices for energy, mobility and industrial systems.
Rimal focuses on high-performance MOSFET, IGBT, SiC and GaN technologies designed to enhance power efficiency, thermal performance and system reliability across demanding applications.
Through strategic technology development and strong ecosystem partnerships, Rimal is building national semiconductor capability while serving global markets with competitive, application-driven power solutions.
With a commitment to innovation, localization and engineering excellence, Rimal Semiconductor supports the transformation of power electronics infrastructure aligned with Saudi Arabia’s Vision 2030.
Product Categories
-
TOTO
-
Trench
-
SGT
-
SH
-
FB
-
AEC-Q
-
SJ MOS
-
SiC MOS
-
SiC SBD
-
GaN (High-Frequency)
-
GaN (Ultra-High-Frequency)
-
Logic
-
TVS
-
TVS AEC-Q
-
TVS (flyback)
-
ESD
-
ESD (flyback)
Design Consultancy & Engineering Support
At McKinsey Electronics, we specialize in the seamless integration of Rimal Semiconductor power devices into your electronic systems. Our team provides engineering expertise, technical guidance and customized consultation to ensure optimal implementation across industrial, energy, mobility and high-efficiency power applications.
Specialized Support at Every Stage
We provide tailored power semiconductor solutions to enhance efficiency, improve thermal performance and ensure long-term system reliability:
-
Power Architecture & Device Selection: Assistance in selecting the appropriate Rimal MOSFET, SJ MOSFET, IGBT, SiC or GaN device based on voltage class, current handling, switching frequency, thermal constraints and efficiency targets.
-
Custom Power Stage Optimization: Support in optimizing gate drive strategy, switching topology and layout design to reduce losses, EMI and thermal stress while maximizing power density.
-
System Integration Support: Expertise in integrating Rimal power devices into your converter, inverter or motor drive architecture, including PCB layout review and switching behavior optimization.
-
Quality & Compliance Guidance: Support in meeting industrial, automotive and energy-sector standards with documentation alignment, traceability and reliability considerations.
Why Choose McKinsey Electronics
01
End-to-End Partnership: From early-stage power architecture design to production ramp-up, we provide hands-on engineering support to accelerate development and mitigate risk.
02
Power Electronics Expertise: Our deep knowledge of MOSFET, IGBT, SiC and GaN technologies enables practical, application-focused technical solutions for high-efficiency systems.
03
Performance-Driven Collaboration: We align with Rimal Semiconductor’s commitment to efficiency and reliability, ensuring every solution meets demanding power and thermal performance standards.
04
Faster Time to Market: Our structured engineering assistance and supply support streamline development cycles and reduce design iteration time.
Let’s Build the Future Together
Need expert support for your next power electronics design?
Contact McKinsey Electronics today to explore how Rimal Semiconductor solutions can improve efficiency, reliability and system performance in your next project.
Featured Product Categories
Low-Voltage MOSFET Portfolio
Rimal’s low-voltage MOSFET portfolio spans 30 V to 300 V with RDS(on) ranging from 0.35 mΩ to 100 mΩ, delivering efficient switching and strong conduction performance in compact footprints. Trench devices support rugged applications such as battery management systems and motor control, while SGT MOSFETs are optimized for chargers, lighting and signal-transmission systems, with multiple package options enabling flexible PCB design.
SiC & Super-Junction MOSFETs
Rimal’s SiC and super-junction MOSFETs, available from 650 V to 1700 V, are designed for high-efficiency power conversion in applications such as power supplies, photovoltaic inverters, home appliances, motors and UPS systems. Their advanced structures enable improved switching performance and efficiency, while the 0 V gate-turn-off SiC architecture simplifies driver design and enhances system reliability.
GaN Power Devices
Rimal’s GaN power devices, including HEMTs and MMICs, operate across DC to 18 GHz and support power levels from 7 W to over 800 W, delivering significantly higher switching frequencies than conventional silicon devices. These devices enable compact, high-density power designs for fast chargers, 5G RF systems, wearables, medical equipment and aerospace applications, supported by space-efficient packaging for highly integrated systems.
